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16 February 2010 Device integration of Ti-catalyzed Si nanowires grown using APCVD
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The integration of nanowires in photonic and photovoltaic devices have been discussed and studied by researchers for some time. Chemical vapor deposition (CVD) growth techniques has been one of the methods used for obtaining device quality nanowires that could potentially provide faster, and more efficient devices at smaller geometries. One dimensional metal catalyzed silicon nanowires grown using CVD techniques have been seen as a possible means to increasing electron transport and device speeds for silicon based electronics. In this experiment the possibility of integrating titanium catalyzed silicon nanowires grown using an atmospheric pressure based CVD method are investigated for possible use in silicon electronics. Growth experiments were conducted at various partial pressures of silicon tetrachloride, temperatures, and growth times to determine optimum growth rates and the window for oriented, straight silicon nanowires. Using linear regression analysis on a sample set of the grown nanowires we are left with the conclusion that nanowires grown using APCVD may possibly be growth limited due to diffusion through the solid catalyst interface and/or due to crystallization. Further experiments maybe needed to further validate titanium-catalyzed silicon nanowire growths and its optimum conditions. Overall, titanium-catalyzed silicon nanowires grown using an APCVD system provides a cost-effective method for growing silicon nanowires that could be used in future silicon based devices.
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Mohammad A. U. Usman and Brady Smith "Device integration of Ti-catalyzed Si nanowires grown using APCVD", Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 759115 (16 February 2010);

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