Multiscale thermal modeling of GaN/AlGaN quantum dot LEDs

G. Romano; G. Penazzi; A. Di Carlo

doi:10.1117/12.842645

25 February 2010 Multiscale thermal modeling of GaN/AlGaN quantum dot LEDs

G. Romano, G. Penazzi, A. Di Carlo

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75971S (2010) https://doi.org/10.1117/12.842645
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this work we develop a multiscale model to investigate the self-heating in nanodevices. The scheme splits up the simulation region in two domains: the micro domain, modeled by the phonon Boltzmann Transport Equation (BTE) and the macro domain, where the heat transport is calculated within the Fourier model. Appropriate boundary conditions match the two domains. The multiscale method is applied to a GaN/AlGaN quantum dot LED. We find out that the maximum temperature is about 334 K. A comparison with the temperature profile given by the BTE and Fourier model is provided. Finally, the effect of the temperature on the optical spectrum is investigated.

Citation Download Citation

G. Romano, G. Penazzi, and A. Di Carlo "Multiscale thermal modeling of GaN/AlGaN quantum dot LEDs", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971S (25 February 2010); https://doi.org/10.1117/12.842645

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