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25 February 2010 Ultra-high sensitivity photodetector arrays with integrated amplification and passivation nano-layers
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Proceedings Volume 7598, Optical Components and Materials VII; 759812 (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
Miniaturized field-deployable spectrometers used for the rapid analysis of chemical and biological substances require high-sensitivity photo detectors. For example, in a Raman spectroscopy system, the receiver must be capable of high-gain, low-noise detection performance due to the intrinsically weak signals produced by the Raman effects of most substances. We are developing a novel, high-gain hetero-junction phototransistor (HPT) detector which employs two nano-structures simultaneously to achieve 100 times higher sensitivity than InGaAs avalanche photodiodes, the most sensitive commercially available photo-detector in the near infrared (NIR) wavelength range, under their normal operation conditions. Integrated into a detector array, this technology has application for Laser-Induced Breakdown Spectroscopy (LIBS), pollution monitoring, pharmaceutical manufacturing by reaction monitoring, chemical & biological transportation safety, and bio-chemical analysis in planetary exploration.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Yao, Irina A. Mokina, Feng Liu, Sean Wang, Jack Zhou, Michael Lange, Weiguo Yang, Patrick Gardner, Leora Peltz, Robert Frampton, and Jeffrey H. Hunt "Ultra-high sensitivity photodetector arrays with integrated amplification and passivation nano-layers", Proc. SPIE 7598, Optical Components and Materials VII, 759812 (25 February 2010);

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