Ultrafast terahertz response of optically excited semiconductor heterostructures

D. Golde; M. Kira; S. W. Koch

doi:10.1117/12.839460

15 February 2010 Ultrafast terahertz response of optically excited semiconductor heterostructures

D. Golde, M. Kira, S. W. Koch

Proceedings Volume 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV; 76000F (2010) https://doi.org/10.1117/12.839460
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

Citation Download Citation

D. Golde, M. Kira, and S. W. Koch "Ultrafast terahertz response of optically excited semiconductor heterostructures", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76000F (15 February 2010); https://doi.org/10.1117/12.839460

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