Terahertz radiation emission from silicon and magnesium doped indium nitride

Ingrid Wilke

doi:10.1117/12.840383

1 March 2010 Terahertz radiation emission from silicon and magnesium doped indium nitride

Ingrid Wilke

Proceedings Volume 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV; 76001V (2010) https://doi.org/10.1117/12.840383
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Indium nitride (InN) is a recently discovered source of broadband terahertz (THz) frequency radiation. Emission of THz-radiation occurs upon irradiation of InN with femtosecond (fs) near-infrared laser (nir) pulses. As a narrow band gap semiconductor, InN is an exciting material for future time-domain THz-spectroscopy and THz-imaging systems powered by femtosecond fiber lasers operating at communication wavelengths (1550nm) and directly diode-laser pumped femtosecond solid state lasers emitting in the 1000-1600nm wavelengths range. Advantages of InN as THz-emitter are strong intrinsic electric fields, potentially low intrinsic carrier concentrations and a very low probability of intervalley scattering of photocarriers. Recent results on the impact of n- and p-type dopants on THz-radiation emission from InN thin films are discussed. Emission of THz-radiation from silicon (Si) -doped and native n-type InN increases with mobility as expected for transient photocurrents as primary mechanism of terahertz radiation emission. Doping of InN with magnesium (Mg) enhances the emission of THz-radiation compared to doping of InN with Si. This is experimental evidence for Mg acting as an electrically active acceptor in InN. THz- radiation emission from InN:Si is weaker than emission of THz-radiation from native n-type InN because of increased electron concentrations due to Si being an electrically active donor in InN.

Citation Download Citation

Ingrid Wilke "Terahertz radiation emission from silicon and magnesium doped indium nitride", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001V (1 March 2010); https://doi.org/10.1117/12.840383

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