The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate

Sheng-Fu Yu; Shoou-Jinn Chang; Sheng-Po Chang; Ray-Ming Lin

doi:10.1117/12.840824

12 March 2010 The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate

Sheng-Fu Yu, Shoou-Jinn Chang, Sheng-Po Chang, Ray-Ming Lin

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020B (2010) https://doi.org/10.1117/12.840824
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We demonstrated very thick (~400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.

Citation Download Citation

Sheng-Fu Yu, Shoou-Jinn Chang, Sheng-Po Chang, and Ray-Ming Lin "The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020B (12 March 2010); https://doi.org/10.1117/12.840824

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