1/f noise: a window to HFET stability

Peter H. Handel; Taher Sherif; Cemil Kayis; Jacob Leach; Congyong Zhu; Hadis Morkoç

doi:10.1117/12.842948

12 March 2010 1/f noise: a window to HFET stability

Peter H. Handel, Taher Sherif, Cemil Kayis, Jacob Leach, Congyong Zhu, Hadis Morkoç

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020M (2010) https://doi.org/10.1117/12.842948
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

A new stability criterion for heterojunction field effect transistors (HFETs) is introduced and discussed in terms of our own stress-induced degradation experiments on the GaN varieties. The new criterion explains how to choose the sheet conductance of the 2 DEG electron plasma in the channel and the temperature dependence of the spontaneous polarization in the gate insulation for maximal stability against stress-induced degradation. According to this criterion, for maximal stability against thermal breakdown, the sheet conductance is chosen to be in a well defined vicinity of the resonance of the optical phonons with the plasma frequency of the electrons in the channel. The first steps toward studying this concept experimentally have been taken by monitoring the 1/f noise of the HFETs both at baseband and through phase noise, i.e., with exponential modulation, and comparing to the extent possible at this point with the results of the quantum 1/f noise calculation. Our measurements of 1/f noise on pristine devices and on stressed devices, degraded by sustained high drain bias, show that even a small 8% decrease in the maximal drain current produces some 5- 10 dB increase in the 1/f noise power. The latter is thus a much more sensitive indicator of damage. The quantum electrodynamic (QED)- and quantum lattice-dynamic (QLD) quantum 1/f noise formulas have been refined for the case of AlGaN/GaN HFETs through a better definition of the coherence parameters s and s'.

Citation Download Citation

Peter H. Handel, Taher Sherif, Cemil Kayis, Jacob Leach, Congyong Zhu, and Hadis Morkoç "1/f noise: a window to HFET stability", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020M (12 March 2010); https://doi.org/10.1117/12.842948

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KEYWORDS

Phonons

Gallium nitride

Field effect transistors

Polarization

Plasma

Phase measurement

Plasmons

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