High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

James W. Raring; Eric M. Hall; Mathew C. Schmidt; Christiane Poblenz; Ben Li; Nick Pfister; Daniel F. Feezell; Richard Craig; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1117/12.840783

10 March 2010 High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

James W. Raring, Eric M. Hall, Mathew C. Schmidt, Christiane Poblenz, Ben Li, Nick Pfister, Daniel F. Feezell, Richard Craig, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Author Affiliations +

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760218 (2010) https://doi.org/10.1117/12.840783
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present new advances in green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we report high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present continuous-wave lasing demonstrations out to 523 nm, representing the longest continuous-wave green laser emission reported to date. Wall-plug efficiencies of over 25% in the violet region, 16.2% in the blue region, and 2.2% in the 500 nm range are presented. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas or solid state lasers and may enable a variety of new applications in defense, biomedical, industrial, and consumer projection displays.

Citation Download Citation

James W. Raring, Eric M. Hall, Mathew C. Schmidt, Christiane Poblenz, Ben Li, Nick Pfister, Daniel F. Feezell, Richard Craig, James S. Speck, Steven P. DenBaars, and Shuji Nakamura "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760218 (10 March 2010); https://doi.org/10.1117/12.840783

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