Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

X. Li; X. Ni; J. Lee; M. Wu; Ü, Özgür; H. Morkoç; T. Paskova; G. Mulholland; K. R. Evans

doi:10.1117/12.843752

17 March 2010 Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

X. Li, X. Ni, J. Lee, M. Wu, Ü, Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021R (2010) https://doi.org/10.1117/12.843752
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We report the internal quantum efficiency (IQE) and external quantum efficiency (EQE) of m-plane InGaN-based LEDs and c-plane LEDs emitting at 400 nm. According to excitation density dependent photoluminescence (PL) measurements, the IQE values for the m-plane LEDs are approximately 70% higher than that for c-plane reference LEDs with the same structure (multiple-quantum well active region with 3nm In_0.01Ga_0.99N barriers) and similar emission wavelength (400nm) albeit on sapphire substrate. Electroluminescence (EL) measurements reveal that the external quantum efficiency (EQE) from both LEDs shows negligible droop under electrical injection due to the employment of thin In_0.01Ga_0.99N barriers, i.e. coupled quantum wells, in the active regions. However, with increasing current, the EL intensity of the m-plane LEDs increases more rapidly than that of the c-plane LEDs, with the EL intensity reaching its peak value at ~240 Acm^-2 for the m-plane LEDs and ~420 Acm^-2 for the c-plane LEDs. Consistent with the IQE values obtained from the PL measurements, the m-plane LEDs exhibit ~ 60% higher EQE values than the c-plane counterparts. It is also worth to mention that increasing the emission wavelength (from 400 nm to 435 nm) for the m-plane LEDs does not affect the efficiency retention at high injection levels.

Citation Download Citation

X. Li, X. Ni, J. Lee, M. Wu, Ü, Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans "Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021R (17 March 2010); https://doi.org/10.1117/12.843752

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Light emitting diodes

External quantum efficiency

Gallium nitride

Electroluminescence

Polarization

Quantum wells

Indium gallium nitride

Show All Keywords

Keywords/Phrases

Search In:

Publication Years