Reduction in operating voltage of UV laser diode

Tomoki Ichikawa; Kenichiro Takeda; Yuji Ogiso; Kengo Nagata; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Hirofumi Kan

doi:10.1117/12.843910

16 March 2010 Reduction in operating voltage of UV laser diode

Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan

Author Affiliations +

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760223 (2010) https://doi.org/10.1117/12.843910
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We fabricated UV laser diodes (LDs). A high-temperature annealing at 850 °C for a short duration was found to be very effective for reducing the series resistance of an n-type contact. By applying high-temperature annealing, the operating voltage of an UV LD was reduced from 10.7 V to 9.5 V at a forward current of 300 mA.

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Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, and Hirofumi Kan "Reduction in operating voltage of UV laser diode", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760223 (16 March 2010); https://doi.org/10.1117/12.843910

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