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15 February 2010 Structural and optical properties of TiO2 thin films annealed in O2 and N2 gases flow
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76031U (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
Titanium dioxide (TiO2) thin films were prepared by ion-assisted electron-beam deposition on glass at room temperature and were annealed by rapid thermal annealing in O2 and N2 gas flow. TiO2 thin films annealed in N2 gas flow are (110) rutile phase and (101) anatase phase, but in O2 gas flow are (110) rutile phase. The optical band gaps of the TiO2 thin films are increased to 3.281 eV with annealing treatment of 300 ~ 500 °C in O2 gas flow and to 3.271 eV in N2 gas flow. However, the band gap begins to decrease to 3.277 eV at the annealing temperature of 600 °C in O2 gas flow and to 3.257 eV in N2 gas flow, respectively.
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Seon Hoon Kim, Tae Un Kim, Doo Gun Kim, Hyun Chul Ki, Geum-Yoon Oh, Hyo Jin Kim, Hang Ju Ko, Myung-Soo Han, Swook Hann, and Hwe Jong Kim "Structural and optical properties of TiO2 thin films annealed in O2 and N2 gases flow", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031U (15 February 2010);

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