Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method

Ko-Hsin Lee; James O'Callaghan; Brendan Roycroft; Chris L. L. M. Daunt; Hua Yang; Jeong Hwan Song; Frank H. Peters; Brian Corbett

doi:10.1117/12.841329

11 February 2010 Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method

Ko-Hsin Lee, James O'Callaghan, Brendan Roycroft, Chris L. L. M. Daunt, Hua Yang, Jeong Hwan Song, Frank H. Peters, Brian Corbett

Author Affiliations +

Proceedings Volume 7604, Integrated Optics: Devices, Materials, and Technologies XIV; 76040J (2010) https://doi.org/10.1117/12.841329
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We report on quantum well intermixing of AlInGaAs-MQWs using the impurity-free vacancy diffusion method with dielectric capping layers which has potential for realization of photonic integrated circuits. The extent of the bandgap shifts with respect to different dielectric capping layers and alloy temperatures are investigated. The intermixing inhibitor and promoter are then integrated using combination of SiO₂ and SiN_x dielectric capping layers which shows a differential photoluminescence wavelength more than 110 nm. Based on this developed intermixing technique, we have fabricated AlInGaAs-InP based material stripe lasers emitting at two different wavelength ranges centered at 1519 nm and 1393 nm respectively. Characterizations including the current-voltage and electroluminescence measurements show that the integration of two-bandgaps can be achieved and furthermore a differential wavelength in lasing spectra up to 120 nm is demonstrated.

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Ko-Hsin Lee, James O'Callaghan, Brendan Roycroft, Chris L. L. M. Daunt, Hua Yang, Jeong Hwan Song, Frank H. Peters, and Brian Corbett "Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method", Proc. SPIE 7604, Integrated Optics: Devices, Materials, and Technologies XIV, 76040J (11 February 2010); https://doi.org/10.1117/12.841329

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