InP overgrowth on SiO2 for active photonic devices on silicon

Carl Junesand; Zhechao Wang; Lech Wosinski; Sebastian Lourdudoss

doi:10.1117/12.841181

12 February 2010 InP overgrowth on SiO₂ for active photonic devices on silicon

Carl Junesand, Zhechao Wang, Lech Wosinski, Sebastian Lourdudoss

Proceedings Volume 7606, Silicon Photonics V; 760602 (2010) https://doi.org/10.1117/12.841181
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Integration of III-V materials on silicon wafer for active photonic devices have previously been achieved by growing thick III-V layers on top of silicon or by bonding the III-V stack layers onto a silicon wafer. Another way is the epitaxial lateral overgrowth (ELOG) of a thin III-V material from a seed layer directly on the silicon wafer, which can be used as a platform for the growth of active devices. As a prestudy, we have investigated lateral overgrowth of InP by Hydride Vapor Phase Epitaxy (HVPE) over SiO₂ masks of different thickness on InP substrates from openings in the mask. Openings which varied in direction, width and separation were made with E-beam lithography allowing a good dimension control even for nano-sized openings (down to 100 nm wide). This mimics overgrowth of InP on top of SiO₂/Si waveguides. By optimizing the growth conditions in terms of growth temperature and partial pressure of the source gases with respect to the opening direction, separation and width, we show that a thin (~200 nm) layer of InP with good morphology and crystalline quality can be grown laterally on top of SiO₂. Due to the thin grown InP layer, amplification structures on top of it can be well integrated with the underlying silicon waveguides. The proposed ELOG technology provides a promising integration platform for hybrid InP/silicon active devices.

Citation Download Citation

Carl Junesand, Zhechao Wang, Lech Wosinski, and Sebastian Lourdudoss "InP overgrowth on SiO₂ for active photonic devices on silicon", Proc. SPIE 7606, Silicon Photonics V, 760602 (12 February 2010); https://doi.org/10.1117/12.841181

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