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16 February 2010 Germanium implanted Bragg gratings in silicon on insulator waveguides
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Proceedings Volume 7606, Silicon Photonics V; 76060G (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
Integrated Bragg gratings are an interesting candidate for waveguide coupling, telecommunication applications, and for the fabrication of integrated photonic sensors. These devices have a high potential for optical integration and are compatible with CMOS processing techniques if compared to their optical fibre counterpart. In this work we present design, fabrication, and testing of Germanium ion implanted Bragg gratings in silicon on insulator (SOI). A periodic refractive index modulation is produced in a 1μm wide SOI rib waveguide by implanting Germanium ions through an SiO2 hardmask. The implantation conditions have been analysed by 3D ion implantation modelling and the induced refractive index change has been investigated on implanted samples by Rutherford Backscattering Spectroscopy (RBS) and ellipsometry analysis. An extinction ratio of up to 30dB in transmission, around the 1.55μm wavelength, has been demonstrated for Germanium implanted gratings on SOI waveguides.
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Renzo Loiacono, Graham T. Reed, Russell Gwilliam, Goran Z. Mashanovich, Liam O'Faolain, Thomas Krauss, Giorgio Lulli, Chris Jeynes, and Richard Jones "Germanium implanted Bragg gratings in silicon on insulator waveguides", Proc. SPIE 7606, Silicon Photonics V, 76060G (16 February 2010);

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