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16 February 2010 Photonic crystal microcavities in SOI waveguides produced in a CMOS environment
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Proceedings Volume 7606, Silicon Photonics V; 760616 (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
We have investigated microcavities in Silicon-on-Insolator (SOI) waveguides. The rectangular waveguides with 500 nm width are fabricated in the 220 nm silicon device layer. The microcavities are formed by one-dimensional photonic crystals in Fabry-Perot structure directly written in the waveguides. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography, where the waveguides as well as the photonic crystals are created in the same step using a single mask. In order to achieve a desired spectral shape of the filter function capable for several applications, a number of different cavities were investigated, e.g. single cavities of first and higher order as well as multi-cavity filters. The experimental results are compared with simulations of photonic crystal microcavities in strip waveguides. The spectral transmission function of such filters dependent on the design parameters are calculated by an analysis based on Finite-Difference-Time-Domain (FDTD) method.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Meister, Aws Al-Saadi, Bülent A. Franke, Shaimaa Mahdi, Berndt Kuhlow, Karsten Voigt, Bernd Tillack, Harald H. Richter, Lars Zimmermann, Viachaslau Ksianzou, Sigurd K. Schrader, and Hans J. Eichler "Photonic crystal microcavities in SOI waveguides produced in a CMOS environment", Proc. SPIE 7606, Silicon Photonics V, 760616 (16 February 2010);

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