Paper
22 January 2010 Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications
D. L. Dheeraj, H. L. Zhou, A. F. Moses, T. B. Hoang, A. T. J. van Helvoort, B. O. Fimland, H. Weman
Author Affiliations +
Abstract
We report the results on the growth, structural and optical characterization of single wurtzite (WZ) GaAs nanowires as well as WZ GaAs/AlGaAs core-shell nanowires with ZB GaAsSb inserts. For the GaAs/GaAsSb heterojunction both the crystal material and crystal phase change plays a critical role in the exact band alignment. We show that ZB GaAsSb inserts with both WZ and ZB GaAs barriers can be grown and hence both type I and type II band alignment can be achieved which has large effects on the optical properties of the nanowires. We thus demonstrate that it is possible to engineer the band-structure at a semiconductor heterojunction by modulating the crystal material as well as the crystal phase.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. L. Dheeraj, H. L. Zhou, A. F. Moses, T. B. Hoang, A. T. J. van Helvoort, B. O. Fimland, and H. Weman "Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081C (22 January 2010); https://doi.org/10.1117/12.847030
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KEYWORDS
Gallium arsenide

Crystals

Nanowires

Interfaces

Antimony

Transmission electron microscopy

Gold

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