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22 January 2010 Polar and semipolar III-nitrides for long wavelength intersubband devices
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Abstract
Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmüller, S. Sakr, L. Lahourcade, A. Das, M. Tchernycheva, P. Ruterana, and F. H. Julien "Polar and semipolar III-nitrides for long wavelength intersubband devices", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081G (22 January 2010); https://doi.org/10.1117/12.847027
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