Polar and semipolar III-nitrides for long wavelength intersubband devices

E. Monroy; P. K. Kandaswamy; H. Machhadani; A. Wirthmüller; S. Sakr; L. Lahourcade; A. Das; M. Tchernycheva; P. Ruterana; F. H. Julien

doi:10.1117/12.847027

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22 January 2010 Polar and semipolar III-nitrides for long wavelength intersubband devices

E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmüller, S. Sakr, L. Lahourcade, A. Das, M. Tchernycheva, P. Ruterana, F. H. Julien

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Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76081G (2010) https://doi.org/10.1117/12.847027
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.

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E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmüller, S. Sakr, L. Lahourcade, A. Das, M. Tchernycheva, P. Ruterana, and F. H. Julien "Polar and semipolar III-nitrides for long wavelength intersubband devices", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081G (22 January 2010); https://doi.org/10.1117/12.847027

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