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24 February 2010 Optical properties in InGaAs quantum dots on SiO2-patterned vicinal (001) GaAs substrate
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Abstract
We studied the energy states in In0.8Ga0.2As SAQDs (self-assembled quantum dots) which depended on W(001) and the misorientation angle of the substrate. Starting materials used in this study were SiO2-patterend exact and 5 degree - off (001) GaAs substrates. In0.8Ga0.2As SAQDs had only ground state emissions for SiO2-patterned exact (001) GaAs substrate, whereas those had ground and excited state emissions for SiO2-patterned 5 degree-off (001) GaAs substrate. These results suggest that discrete nature of the density of states in SAQDs was improved by using SiO2-patterned vicinal (001) GaAs substrate with higher misorientation angle of substrate.
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Hyo Jin Kim, Sou Young Yoo, Hang Ju Ko, Myung Soo Han, Doo Gun Kim, Swook Han, Seon Hoon Kim, and Hyun Chul Ki "Optical properties in InGaAs quantum dots on SiO2-patterned vicinal (001) GaAs substrate", Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 761012 (24 February 2010); https://doi.org/10.1117/12.841706
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