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18 February 2010 Characterization of external quantum efficiency and absorption efficiency in GaAs/ InGaP double heterostructures for laser cooling applications
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Proceedings Volume 7614, Laser Refrigeration of Solids III; 76140B (2010) https://doi.org/10.1117/12.845053
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
The state of current research in laser cooling of semiconductors is reviewed. Emphasis is placed on the characterization of external quantum efficiency and absorption efficiency in GaAs/InGaP double heterostuctures. New experimental results will be presented that characterize device operation as a function of laser excitation power and temperature. Optimum carrier density is obtained independently and used as a screening tool for sample quality. The crucial importance of parasitic background absorption is discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chengao Wang, Michael P. Hasselbeck, Chia-Yeh Li, and Mansoor Sheik-Bahae "Characterization of external quantum efficiency and absorption efficiency in GaAs/ InGaP double heterostructures for laser cooling applications", Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140B (18 February 2010); https://doi.org/10.1117/12.845053
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