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5 February 2010 Development of high-speed VCSELs beyond 10 Gb/s at Emcore
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We report developments at Emcore on serial 850 nm vertical-cavity surface-emitting lasers (VCSELs) operated up to 25 Gb/s. They have been designed to provide a solution not only to meet stringent 10 Gb/s IEEE and Fiber Channel specifications but also for emerging demands of 17 Gb/s Fiber Channel serial and 100 Gb/s (4x25 Gb/s or 5x20 Gb/s) parallel applications in local and storage area networks. This paper covers 10 Gb/s GenX production distributions and improved GenX VCSEL device design to meet low-power requirements at 20 Gb/s. We have successfully demonstrated low threshold current of 0.65 mA at 25°C using nominal 7.3 μm oxide-aperture GenX VCSELs. They can be directly modulated up to 25 Gb/s with open eyes at 6 mA bias. With the same design, open eyes of 20 Gb/s is achieved at bias current as low as 4 mA (9 KA/cm2) at 25°C and 8 mA (18 KA/cm2) at 70°C. These operation conditions are comparable to current 10 Gb/s GenX VCSELs in production which have been shown a great field history.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neinyi Li, Chuan Xie, Chun Lei, Wenlin Luo, Xinyu Sun, Daniel Kuchta, Clint Schow, and Fuad Doany "Development of high-speed VCSELs beyond 10 Gb/s at Emcore", Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150O (5 February 2010);


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