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12 February 2010 Improved performance of GaAsSb/GaAs SQW lasers
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 761608 (2010) https://doi.org/10.1117/12.842253
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Hossain, S. R. Jin, S. J. Sweeney, S.-Q. Yu, S. R. Johnson, D. Ding, and Y.-H. Zhang "Improved performance of GaAsSb/GaAs SQW lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761608 (12 February 2010); https://doi.org/10.1117/12.842253
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