Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

A. Strittmatter; M. Teepe; C. Knollenberg; Z. Yang; C. Chua; N. M. Johnson; P. Spiberg; V. Ivantsov; A. Syrkin; L. Shapovalov; A. Usikov

doi:10.1117/12.842177

12 February 2010 Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

A. Strittmatter, M. Teepe, C. Knollenberg, Z. Yang, C. Chua, N. M. Johnson, P. Spiberg, V. Ivantsov, A. Syrkin, L. Shapovalov, A. Usikov

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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76160H (2010) https://doi.org/10.1117/12.842177
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(1122)/m-sapphire templates by metalorganic chemical vapor deposition. The semi-polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X-ray diffraction measurements indicated high crystallographic quality that approaches that of GaN(0001) layers on sapphire. A comparison based on optical pumping experiments, low- and high-density excitation photoluminescence experiments, and atomic force microscopy is drawn between InGaN/GaN quantum well laser heterostructures grown by metalorganic vapor phase epitaxy either on either polar GaN(0001)/c-sapphire or on semi-polar GaN(1122)/m-sapphire. C-plane InGaN/GaN/sapphire structures exhibited low threshold pump power densities < 500 kW/cm² for emission wavelengths up to 450 nm. For laser structures beyond 450 nm the threshold pump power density rapidly increased resulting in a maximum lasing wavelength of 460 nm. Semipolar InGaN/GaN(1122)/m-sapphire structures showed a factor of 2-4 higher threshold pump power densities at wavelengths below 440 nm which is partly due to lower crystalline perfection of the semi-polar GaN/sapphire templates. However, at longer wavelengths > 460 nm the threshold power density for lasing of semi-polar heterostructures is less than that for c-plane heterostructures which enabled rapid progress to demonstration of lasing at 500 nm wavelength on semi-polar heterostructures. The absence of V-type defects in semi-polar, long-wavelength InGaN/GaN structures which are usually present in long-wavelength c-plane InGaN/GaN structures is attributed to this phenomenon.

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A. Strittmatter, M. Teepe, C. Knollenberg, Z. Yang, C. Chua, N. M. Johnson, P. Spiberg, V. Ivantsov, A. Syrkin, L. Shapovalov, and A. Usikov "Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160H (12 February 2010); https://doi.org/10.1117/12.842177

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KEYWORDS

Heterojunctions

Gallium nitride

Quantum wells

Sapphire

Luminescence

Atomic force microscopy

Optical pumping

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