Translator Disclaimer
12 February 2010 Challenges for mid-IR interband cascade lasers
Author Affiliations +
Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 761619 (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
We review the state-of-the-art performance of interband cascade lasers emitting in the 3-5 μm spectral band and discuss the prospects for future improvements. New five-stage designs produce a combination of pulsed roomtemperature threshold current densities of 400-500 A/cm2 and internal losses as low as ≈ 6 cm-1 for broad-area devices. A 4.4-μm-wide ridge fabricated from one of these wafers and emitting at 3.7 μm lased cw to 335 K, which is the highest cw operating temperature for any semiconductor laser in the 3.0-4.6 μm spectral range. A 10-μm-wide ridge with high-reflection and anti-reflection facet coatings produced up to 59 mW of cw power at 298 K, and displayed a maximum wall-plug efficiency of 3.4%. Corrugated-sidewall distributed-feedback lasers from similar material produce 45 mW of cw power in a single spectral mode at -20°C, with maximum wall-plug efficiency of 7.6%. The current tuning range for temperatures between 0 and 25°C is ≥11 nm.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Vurgaftman, M. Kim, C. S. Kim, W. W. Bewley, C. L. Canedy, J. R. Lindle, J. Abell, and J. R. Meyer "Challenges for mid-IR interband cascade lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761619 (12 February 2010);


Back to Top