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12 February 2010 Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76161H (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
650 nm tapered laser diodes with nearly diffraction limited beam quality are requested for laser display applications. In this paper, results for 2 mm long 650 nm tapered lasers diodes with different lateral geometries will be presented. The vertical structure is based on a 5 nm thick InGaP single quantum well embedded in AlGaInP waveguide and n- AlInP and p-AlGaAs cladding layers. The ridge waveguides of lengths LRW = 200 μm, 300 μm, 500 μm, and 750 μm were fabricated using selective etching. The contact window for the tapered section was defined applying ion implantation. Devices with a taper angle of 4° were manufactured. The facets were passivated. The rear side was high reflection coated and the taper side anti reflection coated. The devices were mounted p-side down on CVDdiamond heat spreaders and standard C-mounts. All devices reached a maximal output power larger than 1 W. They had a threshold current density of about 700 A/cm2 and a slope efficiency of 0.8 W/A. The best conversion efficiency was 20%. The devices with the shortest RW-length LRW = 200 μm had the best beam quality (beam waist width 7 μm, far field angle 8.8°, 85% of the emitted power in central lobe, M2 of 1.3 (all values measured at 1/e2-level)) at P = 1 W. The beam quality for devices with longer RW-section deteriorates up to M2 = 4.4 for a LRW = 750 μm laser.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Sumpf, P. Adamiec, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, and G. Tränkle "Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161H (12 February 2010);


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