Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs

Hideki Hirayama

doi:10.1117/12.845512

11 February 2010 Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs

Hideki Hirayama

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76171G (2010) https://doi.org/10.1117/12.845512
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We demonstrated 222-282 nm AlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN on sapphire were realized by using ammonia (NH₃) pulse-flow multilayer (ML) growth technique. We obtained quite high IQE (~80%) from slightly-Inincorporated (0.3%) InAlGaN QWs and obtained over 10 mW CW output power for 280 nm-band InAlGaN based LED. The maximum output power obtained were over 10 mW for 264-282 nm LEDs, 1.2-5mW for 240-256 nm LEDs and sub-milliwatt for 222-237 nm LEDs. The maximum external quantum efficiency (EQE) of 280 nm-band LED was 1.2%.

Citation Download Citation

Hideki Hirayama "Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171G (11 February 2010); https://doi.org/10.1117/12.845512

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available