Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

Dong-Sing Wuu; Wen-Yu Lin; Ying-Chiuan Tsai; Shih-Cheng Huang; Ray-Hua Horng; Chien-Min Liu

doi:10.1117/12.845439

11 February 2010 Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

Dong-Sing Wuu, Wen-Yu Lin, Ying-Chiuan Tsai, Shih-Cheng Huang, Ray-Hua Horng, Chien-Min Liu

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76171H (2010) https://doi.org/10.1117/12.845439
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this study, two approaches using various insertion structures are proposed for the near-UV LEDs. One is through a single MOCVD process where a heavily Mg-doped GaN insertion layer (HD-IL) technique is employed to improve crystalline quality of the GaN layer and followed by rest of required GaN-based LED structure. Another approach was demonstrated by the near-UV LEDs with an embedded distributed SiO₂-disk structure. The periodically spaced hexagonal disk-shaped SiO₂ mask array was deposited on the GaN/sapphire template and followed by the MOCVD regrowth process. These improvements contribute the high-performance 380-nm LEDs with enhanced output powers by 20-40% in magnitude.

Citation Download Citation

Dong-Sing Wuu, Wen-Yu Lin, Ying-Chiuan Tsai, Shih-Cheng Huang, Ray-Hua Horng, and Chien-Min Liu "Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171H (11 February 2010); https://doi.org/10.1117/12.845439

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