Paper
18 March 2010 Removal of trapped charge in selenium detectors
Author Affiliations +
Abstract
Flat panel selenium detectors (1) have been commercially available since 1998 (2). The MTF of these detectors can approach the theoretical SINC function for the pixel size (3). Detectors can be designed with selenium thickness suitable for absorption of the range of x-ray energy for the modality (4, 5). For higher energy x rays, the thickness of the selenium layer can be increased without greatly degrading the spatial resolution. The non-spreading nature of the signal allows the detector to detect very weak x-ray signal in the vicinity of strong signal. Selenium detectors can therefore be designed to produce very high dynamic range images when needed. However, as a photo-conducting material, selenium also comes with some less than ideal properties. For example, charge trapping, long settling time for with bias electric field, and interface charge injection (6). These adverse properties must be included in detector design for optimal performance in each application. This paper describes a novel method for interfacial charge removal using lateral conductivity of selenium.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Denny Lee and Andrew D. A. Maidment "Removal of trapped charge in selenium detectors", Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 762218 (18 March 2010); https://doi.org/10.1117/12.845279
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KEYWORDS
Selenium

Sensors

X-rays

Electrodes

X-ray detectors

X-ray imaging

Interfaces

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