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2 December 2009 Electronic structure of quantum dots in (111) direction
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76311Y (2009) https://doi.org/10.1117/12.851772
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
Electronic structures of InAs/GaAs cubic and truncated pyramidal quantum dots grown in (111) direction are showed in this paper. Continuum elastic theory is used to determine the strain distributions. Electronic energy levels are calculated by solving a three-dimensional effective mass Shrödinger equation including a strain modified confinement potential and piezoelectric effects. The influence of polarization effect to conduction band of quantum dot is discussed. It is found that polarization distribution is dependent on the shape of quantum dot.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Zhao, Zhongyuan Yu, and Yumin Liu "Electronic structure of quantum dots in (111) direction", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311Y (2 December 2009); https://doi.org/10.1117/12.851772
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