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2 December 2009 Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76311Z (2009) https://doi.org/10.1117/12.851984
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zihuan Xu, Yumin Liu, Zhongyuan Yu, and Wenjie Yao "Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311Z (2 December 2009); https://doi.org/10.1117/12.851984
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