Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

Baozhu Wang; Shengbiao An; Huanming Wen; Ruihong Wu; Xiaojun Wang; Xiaoliang Wang

doi:10.1117/12.852235

2 December 2009 Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

Baozhu Wang, Shengbiao An, Huanming Wen, Ruihong Wu, Xiaojun Wang, Xiaoliang Wang

Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76312H (2009) https://doi.org/10.1117/12.852235
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China

Abstract

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Citation Download Citation

Baozhu Wang, Shengbiao An, Huanming Wen, Ruihong Wu, Xiaojun Wang, and Xiaoliang Wang "Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312H (2 December 2009); https://doi.org/10.1117/12.852235

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