Paper
2 December 2009 Synthesis and photoelectrical properties of zinc phthalocyanine-bisphenol A epoxy derivative
Wanxi Cheng, Yue Shen, Fei Zheng, Feng Gu, Jiangcheng Zhang
Author Affiliations +
Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76312O (2009) https://doi.org/10.1117/12.851763
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
A novel soluble zinc phthalocyanine-bisphenol A epoxy derivative (ZnPc-DGEBPA) was synthesized and characterized by infrared (IR), electronic absorption spectra and fluorescence spectra. Electronic absorption spectrum of ZnPc-DGEBPA exhibited characteristic absorption peaks at 367 nm and 710 nm. Fluorescence emission peak was at 458 nm and quantum yield reached 0.33 in N, N-dimethylformamide (DMF). ZnPc-DGEBPA thin films were prepared by dip-coating technology. Current-voltage characteristics of the films were measured and photoconductivity was increased by an order of magnitude compared with dark conductivity, which indicates the product has excellent film forming ability and good photoelectric response.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wanxi Cheng, Yue Shen, Fei Zheng, Feng Gu, and Jiangcheng Zhang "Synthesis and photoelectrical properties of zinc phthalocyanine-bisphenol A epoxy derivative", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312O (2 December 2009); https://doi.org/10.1117/12.851763
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KEYWORDS
Absorption

Luminescence

Thin films

Zinc

Epoxies

Solar cells

Quantum efficiency

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