Paper
2 December 2009 The electrical properties of the diamond field effect transistor
Yi Zhang, Lin-jun Wang, Jian Huang, Ke Tang, Fengjuan Zhang, Qian Fang, Qingkai Zeng, Run Xu, Jijun Zhang, Jiahua Min, Yiben Xia
Author Affiliations +
Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76312Q (2009) https://doi.org/10.1117/12.854267
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Zhang, Lin-jun Wang, Jian Huang, Ke Tang, Fengjuan Zhang, Qian Fang, Qingkai Zeng, Run Xu, Jijun Zhang, Jiahua Min, and Yiben Xia "The electrical properties of the diamond field effect transistor", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312Q (2 December 2009); https://doi.org/10.1117/12.854267
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KEYWORDS
Diamond

Field effect transistors

Gold

Electrodes

Aluminum

Photoresist materials

Plasma

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