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20 March 2010 A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection
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Abstract
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63/cm2. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungmin Huh, Liping Ren, David Chan, Stefan Wurm, Kenneth Goldberg, Iacopo Mochi, Toshio Nakajima, Masahiro Kishimoto, Byungsup Ahn, Inyong Kang, Joo-on Park, Kyoungyong Cho, Sang-in Han, and Thomas Laursen "A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360K (20 March 2010); https://doi.org/10.1117/12.846922
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