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20 March 2010Study of practical TAT reduction approaches for EUV flare correction
We introduce techniques of flare compensation for Extreme Ultraviolet Lithography that can reduce the calculation time
of a flare map and flare correction. In the first approach, the range of a flare point spread function is divided into several
regions and the size of meshes for the flare map in each region is selected. In the second approach, the size of the mask
pattern is controlled by referring to the flare map in the mask-making process. In the third approach, dosage of each
point in a mask corresponding to the flare map is modulated when transferring the mask pattern onto the resist. Use of
these approaches in the proper combination is effective for TAT reduction and accuracy of the flare compensation.