EUV lithography at the 22nm technology node

Obert Wood; Chiew-Seng Koay; Karen Petrillo; Hiroyuki Mizuno; Sudhar Raghunathan; John Arnold; Dave Horak; Martin Burkhardt; Gregory McIntyre; Yunfei Deng; Bruno La Fontaine; Uzo Okoroanyanwu; Tom Wallow; Guillaume Landie; Theodorus Standaert; Sean Burns; Christopher Waskiewicz; Hirohisa Kawasaki; James H.-C. Chen; Matthew Colburn; Bala Haran; Susan S.-C. Fan; Yunpeng Yin; Christian Holfeld; Jens Techel; Jan-Hendrik Peters; Sander Bouten; Brian Lee; Bill Pierson; Bart Kessels; Robert Routh; Kevin Cummings

doi:10.1117/12.847049

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22 March 2010 EUV lithography at the 22nm technology node

Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzo Okoroanyanwu, Tom Wallow, Guillaume Landie, Theodorus Standaert, Sean Burns, Christopher Waskiewicz, Hirohisa Kawasaki, James H.-C. Chen, Matthew Colburn, Bala Haran, Susan S.-C. Fan, Yunpeng Yin, Christian Holfeld, Jens Techel, Jan-Hendrik Peters, Sander Bouten, Brian Lee, Bill Pierson, Bart Kessels, Robert Routh, Kevin Cummings

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Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76361M (2010) https://doi.org/10.1117/12.847049
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

We are evaluating the readiness of extreme ultraviolet (EUV) lithography for insertion into production at the 15 nm technology node by integrating it into standard semiconductor process flows because we believe that device integration exercises provide the truest test of technology readiness and, at the same time, highlight the remaining critical issues. In this paper, we describe the use of EUV lithography with the 0.25 NA Alpha Demo Tool (ADT) to pattern the contact and first interconnect levels of a large (~24 mm x 32 mm) 22 nm node test chip using EUV masks with state-of-the-art defectivity (~0.3 defects/cm²). We have found that: 1) the quality of EUVL printing at the 22 nm node is considerably higher than the printing produced with 193 nm immersion lithography; 2) printing at the 22 nm node with EUV lithography results in higher yield than double exposure double-etch 193i lithography; and 3) EUV lithography with the 0.25 NA ADT is capable of supporting some early device development work at the 15 nm technology node.

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Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzo Okoroanyanwu, Tom Wallow, Guillaume Landie, Theodorus Standaert, Sean Burns, Christopher Waskiewicz, Hirohisa Kawasaki, James H.-C. Chen, Matthew Colburn, Bala Haran, Susan S.-C. Fan, Yunpeng Yin, Christian Holfeld, Jens Techel, Jan-Hendrik Peters, Sander Bouten, Brian Lee, Bill Pierson, Bart Kessels, Robert Routh, and Kevin Cummings "EUV lithography at the 22nm technology node", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361M (22 March 2010); https://doi.org/10.1117/12.847049

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