Assessing out-of-band flare effects at the wafer level for EUV lithography

Simi A. George; Patrick P. Naulleau; Charles D. Kemp; Paul E Denham; Senajith Rekawa

doi:10.1117/12.847953

22 March 2010 Assessing out-of-band flare effects at the wafer level for EUV lithography

Simi A. George, Patrick P. Naulleau, Charles D. Kemp, Paul E Denham, Senajith Rekawa

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763626 (2010) https://doi.org/10.1117/12.847953
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

Citation Download Citation

Simi A. George, Patrick P. Naulleau, Charles D. Kemp, Paul E Denham, and Senajith Rekawa "Assessing out-of-band flare effects at the wafer level for EUV lithography", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763626 (22 March 2010); https://doi.org/10.1117/12.847953

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