Paper
22 March 2010 Development of novel positive-tone resists for EUVL
Takanori Owada, Hideaki Shiotani, Kayoko Aoyama, Takashi Kashiwamura, Mitsuru Shibata, Testuro Takeya, Hiroaki Oizumi, Toshiro Itani
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Abstract
For improving resist performance, we have developed new Low-Molecular resists for which the substituted position and number of protecting group have no dispersion for controlling the chemical properties, such as solubility rate to alkaline developer. And we evaluated their Electron beam (EB) and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of these resists was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new low molecular weight resists. The material properties, EUV outgassing analysis and the patterning capability of these newly synthesized low molecular weight resists are reported.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takanori Owada, Hideaki Shiotani, Kayoko Aoyama, Takashi Kashiwamura, Mitsuru Shibata, Testuro Takeya, Hiroaki Oizumi, and Toshiro Itani "Development of novel positive-tone resists for EUVL", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763632 (22 March 2010); https://doi.org/10.1117/12.846069
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KEYWORDS
Extreme ultraviolet lithography

Lithography

Extreme ultraviolet

Line edge roughness

Line width roughness

Scanning electron microscopy

Electron beam lithography

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