Computational inspection applied to a mask inspection system with advanced aerial imaging capability

Linyong Pang; Danping Peng; Lin He; Dongxue Chen; Thuc Dam; Vikram Tolani; Aviram Tam; Wolf Staud

doi:10.1117/12.848615

1 April 2010 Computational inspection applied to a mask inspection system with advanced aerial imaging capability

Linyong Pang, Danping Peng, Lin He, Dongxue Chen, Thuc Dam, Vikram Tolani, Aviram Tam, Wolf Staud

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76380V (2010) https://doi.org/10.1117/12.848615
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

At the most advanced technology nodes, such as 32nm and 22nm, aggressive OPC and Sub-Resolution Assist Features (SRAFs) are required. However, their use results in significantly increased mask complexity, challenging mask defect dispositioning more than ever. To address these challenges in mask inspection and defect dispositioning, new mask inspection technologies have been developed that not only provide high resolution masks imaged at the same wavelength as the scanner, but that also provide aerial images by using both: software simulation and hardware emulation. The original mask patterns stored by the optics of mask inspection systems can be recovered using a patented algorithm based on the Level Set Method. More accurate lithography simulation models can be used to further evaluate defects on simulated resist patterns using the recovered mask pattern in high resolution and aerial mode. An automated defect classification based on lithography significance and local CD changes is also developed to disposition tens of thousands of potential defects in minutes, so that inspection throughput is not impacted.

Citation Download Citation

Linyong Pang, Danping Peng, Lin He, Dongxue Chen, Thuc Dam, Vikram Tolani, Aviram Tam, and Wolf Staud "Computational inspection applied to a mask inspection system with advanced aerial imaging capability", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380V (1 April 2010); https://doi.org/10.1117/12.848615

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