A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography

C. M. Ke; Victor Shih; Jacky Huang; L. J. Chen; Willie Wang; G. T. Huang; W. T. Yang; Sophia Wang; C. R. Liang; H. H. Liu; H. J. Lee; L. G. Terng; T. S. Gau; John Lin; Kaustuve Bhattacharyya; Maurits van der Schaar; Noelle Wright; Marc Noot; Mir Shahrjerdy; Vivien Wang; Spencer Lin; Jon Wu; Sophie Peng; Gavin Liu; Wei-Shun Tzeng; Jim Chen; Andreas Fuchs; Omer Adam; Cathy Wang

doi:10.1117/12.853318

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1 April 2010 A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography

C. M. Ke, Victor Shih, Jacky Huang, L. J. Chen, Willie Wang, G. T. Huang, W. T. Yang, Sophia Wang, C. R. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. S. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Marc Noot, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Gavin Liu, Wei-Shun Tzeng, Jim Chen, Andreas Fuchs, Omer Adam, Cathy Wang

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Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76383P (2010) https://doi.org/10.1117/12.853318
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and matching needs in to deep sub-nanometer level as well as driving the need for higher sampling (throughput). Keeping the above in mind, a new scatterometry-based platform (called YieldStar) is under development at ASML. Authors have already published results of a thorough investigation of this promising new metrology technique which showed excellent results on resolution, precision and matching for overlay, as well as basic and advanced capabilities for CD. In this technical presentation the authors will report the newest results taken from YieldStar. This new work is divided in two sections: monitor wafer applications and product wafer applications. Under the monitor wafer application: overlay, CD and focus applications will be discussed for scanner and track hotplate control. Under the product wafer application: first results from integrated metrology will be reported followed by poly layer and 3D CD reconstruction results from hole layers as well as overlay-results from small (30x60um), process-robust overlay targets are reported.

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C. M. Ke, Victor Shih, Jacky Huang, L. J. Chen, Willie Wang, G. T. Huang, W. T. Yang, Sophia Wang, C. R. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. S. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Marc Noot, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Gavin Liu, Wei-Shun Tzeng, Jim Chen, Andreas Fuchs, Omer Adam, and Cathy Wang "A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76383P (1 April 2010); https://doi.org/10.1117/12.853318

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