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25 March 2010 Multilevel integration of patternable low-κ material into advanced Cu BEOL
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In this paper, we wish to report, for the first time, on a simple, low-cost, novel way to form dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the-Line (BEOL) structures using a patternable low dielectric constant (low-κ) dielectric material concept. A patternable low-κ dielectric material combines the functions of a traditional resist and a dielectric material into one single material. It acts as a traditional resist during patterning and is subsequently converted to a low-κ dielectric material during a post-patterning curing process. No sacrificial materials (separate resists or hardmasks) and their related deposition, pattern transfer (etch) and removal (strip) are required to form dual-damascene BEOL patterns. We have successfully demonstrated multi-level dual-damascene integration of a novel patternable low-κ dielectric material into advanced Cu BEOL. This κ=2.7 patternable low-κ material is based on the industry standard SiCOH-based (silsesquioxane polymer) material platform and is compatible with 248 nm optical lithography. Multilevel integration of this patternable low-κ material at 45 nm node Cu BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure.
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Qinghuang Lin, S. T. Chen, A. Nelson, P. Brock, S. Cohen, B. Davis, N. Fuller, R. Kaplan, R. Kwong, E. Liniger, D. Neumayer, J. Patel, H. Shobha, R. Sooriyakumaran, S. Purushothaman, T. Spooner, R. Miller, R. Allen, and R. Wisnieff "Multilevel integration of patternable low-κ material into advanced Cu BEOL", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390J (25 March 2010);

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