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29 March 2010 LWR reduction by novel lithographic and etch techniques
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Abstract
The reduction of line width roughness (LWR) is a critical issue in developing resist materials for EUV lithography and LWR represents a trade-off between sensitivity and resolution. Additional post pattern processing is expected as an LWR reduction technique without impact to resolution or sensitivity. This paper reports the LWR reducing effect of a post-development resist-smoothing process. Approximately 20% improvement in LWR for ArF immersion exposed resist patterns was achieved for two types of resist and two illumination conditions. The LWR after BARC etching in which resist-smoothing was applied was decreased relative to the case in which smoothing was not applied. Resist-smoothing process also reduced LWR of an EUV exposure resist pattern by approximately 10%. These results confirm that resistsmoothing process is robust for different resists and illumination conditions.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinji Kobayashi, Satoru Shimura, Tetsu Kawasaki, Kathleen Nafus, Shinichi Hatakeyama, Hideo Shite, Eiichi Nishimura, Masato Kushibiki, Arisa Hara, Roel Gronheid, Alessandro Vaglio-Pret, and Junichi Kitano "LWR reduction by novel lithographic and etch techniques", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763914 (29 March 2010); https://doi.org/10.1117/12.846318
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