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30 March 2010 Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)
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Abstract
Developable BARCs (DBARCs) are useful for implant layers because they eliminate the plasma etch step avoiding damage to the plasma sensitive layers during implantation. It is expected that DBARC will also be used for non-implant layers and double exposure technology. AZ has pioneered DBARC based on photosensitive cleave as well as crosslink/decrosslink mechanisms. In this paper, we focus on various processing factors for 193nm DBARC and discuss the influences of prewet, thickness, topography and substrates on lithographic performance. Prewet of DBARC before resist coating deteriorated performance, however, it was resolved by modifying DBARC formulations. The optimized DBARC showed both optical and lithographic performance comparable to conventional BARCs. DBARCs minimized reflection from the substrates and notching of patterns was improved observed on silicon oxide topography. This paper includes simulation, DBARC contrast curve analyses, and recent dry and immersion exposure results of DBARC.
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Takanori Kudo, Srinivasan Chakrapani, Alberto Dioses, Edward Ng, Charito Antonio, Deepa Parthasarathy, Richard Collett, Mark Neisser, and Munirathna Padmanaban "Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763928 (30 March 2010); https://doi.org/10.1117/12.846313
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