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30 March 2010 Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis
Vassilios Constantoudis, George P. Patsis, Evangelos Gogolides
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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392H (2010) https://doi.org/10.1117/12.848580
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of rms roughness and correlation length is found for resists with homogeneous solubility. The scaling exponents are shown to obey the dynamical scaling hypothesis of Family-Viscek. The insertion of inhomogeneity in the solubility of resist causes much larger increase of rms roughness and anomalous scaling behaviour. Comparison with experimental results shows good agreement with the simulation predictions.
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Vassilios Constantoudis, George P. Patsis, and Evangelos Gogolides "Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392H (30 March 2010); https://doi.org/10.1117/12.848580
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KEYWORDS
Polymers
Stochastic processes
Surface roughness
Correlation function
Ionization
Polymer thin films
Line edge roughness
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