Evaluation of lithographic benefits of using ILT techniques for 22nm-node

Yi Zou; Yunfei Deng; Jongwook Kye; Luigi Capodieci; Cyrus Tabery; Thuc Dam; Anthony Aadamov; Ki-Ho Baik; Linyong Pang; Bob Gleason

doi:10.1117/12.848479

10 March 2010 Evaluation of lithographic benefits of using ILT techniques for 22nm-node

Yi Zou, Yunfei Deng, Jongwook Kye, Luigi Capodieci, Cyrus Tabery, Thuc Dam, Anthony Aadamov, Ki-Ho Baik, Linyong Pang, Bob Gleason

Author Affiliations +

Proceedings Volume 7640, Optical Microlithography XXIII; 76400L (2010) https://doi.org/10.1117/12.848479
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

As increasing complexity of design and scaling continue to push lithographic imaging to its k1 limit, lithographers have been developing computational lithography solutions to extend 193nm immersion lithography to the 22nm technology node. In our paper, we investigate the beneficial source or mask solutions with respect to pattern fidelity and process variation (PV) band performances for 1D through pitch patterns, SRAM and Random Logic Standard Cells. The performances of two different computational lithography solutions, idealized un-constrained ILT mask and manhattanized mask rule constrain (MRC) compliant mask, are compared. Additionally performance benefits for process-window aware hybrid assist feature (AF) are gauged against traditional rule-based AF. The results of this study will demonstrate the lithographic performance contribution that can be obtained from these mask optimization techniques in addition to what source optimization can achieve.

Citation Download Citation

Yi Zou, Yunfei Deng, Jongwook Kye, Luigi Capodieci, Cyrus Tabery, Thuc Dam, Anthony Aadamov, Ki-Ho Baik, Linyong Pang, and Bob Gleason "Evaluation of lithographic benefits of using ILT techniques for 22nm-node", Proc. SPIE 7640, Optical Microlithography XXIII, 76400L (10 March 2010); https://doi.org/10.1117/12.848479

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