In-situ Mueller matrix polarimetry of projection lenses for 193-nm lithography

Hiroshi Nomura; Iwao Higashikawa

doi:10.1117/12.845973

3 March 2010 In-situ Mueller matrix polarimetry of projection lenses for 193-nm lithography

Hiroshi Nomura, Iwao Higashikawa

Proceedings Volume 7640, Optical Microlithography XXIII; 76400Q (2010) https://doi.org/10.1117/12.845973
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

For immersion lithography with aggressive polarization illumination settings, it is important to newly construct two systems for diagnosing lithography tools; Stokes polarimetry of illumination and Mueller matrix polarimetry of projection lenses. At the SPIE conference on Optical Microlithography XXI in 2008, the authors had already reported on the former Stokes polarimetry. True polarization states of several illumination settings emerged. On the other hand, the latter Mueller matrix polarimetry is thought more complicated than the Stokes polarimetry. Therefore, the Mueller matrix polarimetry is reported separating into two papers. A theoretical approach to realizing the polarimetry has reported at the SPIE conference on Lithography Asia 2009. The test mask for the Mueller matrix polarimetry also comprises thin-plate polarizers and wide-view-angle quarter-waveplates, both which are developed by collaboration with Kogakugiken Corporation in Japan. Mueller matrices of the sample projecting optics are reconstructed by sixteen measurements of Stokes parameters of a light ray that reaches the wafer plane though the test mask and the projecting optics. The Stokes parameters are measured with a polarization measurement system already equipped on a side stage lying at the wafer plane. It took about seven hours to capture all the images at five image heights within the static exposure field. Stokes parameters are automatically calculated from the images and outputted from the lithography tools as a text file, and Mueller matrices are calculated by homebuilt software in a short time. All the images were captured under the identical illumination condition that the tool manufacturer calls "un-polarization".

Citation Download Citation

Hiroshi Nomura and Iwao Higashikawa "In-situ Mueller matrix polarimetry of projection lenses for 193-nm lithography", Proc. SPIE 7640, Optical Microlithography XXIII, 76400Q (3 March 2010); https://doi.org/10.1117/12.845973

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