Translator Disclaimer
3 March 2010 Methods for assessing empirical model parameters and calibration pattern measurements
Author Affiliations +
Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Zhou, Eldar Khaliullin, and Lan Luan "Methods for assessing empirical model parameters and calibration pattern measurements", Proc. SPIE 7640, Optical Microlithography XXIII, 764038 (3 March 2010);


OPC model calibration considerations for data variance
Proceedings of SPIE (March 07 2008)
Accurate lithography analysis for yield prediction
Proceedings of SPIE (October 30 2007)
What is a good empirical model?
Proceedings of SPIE (September 23 2009)
OPC development in action for advanced technology nodes
Proceedings of SPIE (October 31 2007)

Back to Top