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3 March 2010 Methods for assessing empirical model parameters and calibration pattern measurements
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Abstract
Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Zhou, Eldar Khaliullin, and Lan Luan "Methods for assessing empirical model parameters and calibration pattern measurements", Proc. SPIE 7640, Optical Microlithography XXIII, 764038 (3 March 2010); https://doi.org/10.1117/12.847734
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