Realizing a 45-nm system on chip in the age of variability

Laurent Le Cam; Andy Appleby; Philippe Hurat; Benoit Carpentier; Kuang-Han Chen; Nishath Verghese

doi:10.1117/12.848023

10 March 2010 Realizing a 45-nm system on chip in the age of variability

Laurent Le Cam, Andy Appleby, Philippe Hurat, Benoit Carpentier, Kuang-Han Chen, Nishath Verghese

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Proceedings Volume 7641, Design for Manufacturability through Design-Process Integration IV; 764106 (2010) https://doi.org/10.1117/12.848023
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In this paper, we present the challenges of the realization of a large 45nm modern Media Processing SoC with multiple design teams distributed across many countries and time zones. We also describe the complex design methodology deployed to ensure the design is "closable" in the timing and manufacturability domain. Silicon variability impacts both the physical integrity and the parametric performance of the design. Lithography and CMP can cause enough context-dependent systematic variations, requiring exhaustive lithography and CMP physical verification and optimization of the layout. We present the physical and electrical DFM methodology at NXP. We will show how NXP has developed a manufacturing-aware design flow based on early prevention, detection and fixing using a hierarchical approach for model-based lithography checks and model-based CMP checks, from IP level to full-chip. We also present results of variability-aware timing sign-off.

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Laurent Le Cam, Andy Appleby, Philippe Hurat, Benoit Carpentier, Kuang-Han Chen, and Nishath Verghese "Realizing a 45-nm system on chip in the age of variability", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 764106 (10 March 2010); https://doi.org/10.1117/12.848023

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KEYWORDS

Lithography

Chemical mechanical planarization

Design for manufacturing

Model-based design

System on a chip

Manufacturing

Metals

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