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6 October 2010 Study on optimization of process parameters for lithium niobate photoelectric material in CMP
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Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 765532 (2010) https://doi.org/10.1117/12.867917
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China
Abstract
Chemical mechanical polishing (CMP) technology in the semiconductor manufacturing process is expanded and used to machine lithium niobate (LiNbO3) wafer efficiently in order to obtain ultra smooth LiNbO3. The alkaline polishing slurry for LiNbO3 CMP is prepared in order to decreasing surface roughness and improving material removal rate. The paper optimized design four key parameters, polishing pressure, polishing plate speed, slurry flow rate and slurry pH which influence removal rate of LiNbO3 were analyzed by using Taguchi method and the comprehensive optimized polishing parameter were obtained. The results of experiments indicate that when the polishing pressure is 140kPa, the polishing plate speed is 60r/min, the slurry flow rate is 180ml/min and the slurry pH is 11, the optimal polishing efficiency can be obtained. The removal rate of LiNbO3 wafer reaches 350nm/min.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shengli Wang, Zhenxia Li, Yuling Liu, and Huilai Mu "Study on optimization of process parameters for lithium niobate photoelectric material in CMP", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 765532 (6 October 2010); https://doi.org/10.1117/12.867917
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