Paper
22 October 2010 Acidic chemical bath deposition of Cd1-xZnxS thin films
Meng Cao, Yan Sun, Jie Wu, Xin Chen, Ning Dai
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Abstract
Cd1-xZnxS ternary material has a wider band gap than CdS which makes it a better window material for use in CdTe solar cells. Typical chemical bath deposition (CBD) processes for sulfides employ an alkaline medium containing the chalcogenide source and the metal ion. In this work, Cd1-xZnxS thin films have been deposited from acidic solution. The composition, surface morphology and structural properties of the as-deposited and annealed Cd1-xZnxS thin films were studied using energy dispersive X-ray analysis (EDX), scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The band gap of the as-deposited Cd1-xZnxS thin films varied from 2.38 to 2.44 eV, whereas in the annealed films varied from 2.36 to 2.42 eV. The decreased band gaps of the Cd1-xZnxS thin films were due to the improved crystalline nature of the material.
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Meng Cao, Yan Sun, Jie Wu, Xin Chen, and Ning Dai "Acidic chemical bath deposition of Cd1-xZnxS thin films", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76583B (22 October 2010); https://doi.org/10.1117/12.867717
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KEYWORDS
Thin films

Zinc

Scanning electron microscopy

Cadmium

Cadmium sulfide

Crystals

Ions

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