Paper
3 May 2010 Low-resistance a-SiGe-based microbolometer pixel for future smart IR FPA
J. J. Yon, J. P. Nieto, L. Vandroux, P. Imperinetti, E. Rolland, V. Goudon, C. Vialle, A. Arnaud
Author Affiliations +
Abstract
In the outlook of the next 12μm pixel node uncooled IR FPA, the Laboratoire InfraRouge (LIR) of the Electronics and Information Technology Laboratory (LETI) is still pushing forward the amorphous silicon (a-Si) based microbolometer technology. A promising approach is the development of a lower resistance a-Si pixel, giving such a microbolometer IR sensor an edge for enhanced bias current capability, resulting in higher sensitivity. With this goal in sight, the paper reports on a preliminary study that aims at incorporating a germanium ratio in the standard amorphous silicon film. This approach successfully resulted in a significantly reduced thin film resistance. Both physical and electrical characteristics of these low resistance a-SiGe thin films are presented. From these basic parameter measurements, the paper further elaborates on the expected IR performance when such an a-SiGe film is applied to an uncooled FPA. Finally, we describe how this new generation of low resistance pixel fits perfectly with the maximum voltage requirement of advanced CMOS processes, which are needed for future smart ROIC and intelligent IR pixel.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. Yon, J. P. Nieto, L. Vandroux, P. Imperinetti, E. Rolland, V. Goudon, C. Vialle, and A. Arnaud "Low-resistance a-SiGe-based microbolometer pixel for future smart IR FPA", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600U (3 May 2010); https://doi.org/10.1117/12.850862
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Cited by 9 scholarly publications.
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KEYWORDS
Germanium

Signal to noise ratio

Resistance

Thin films

Amorphous silicon

Microbolometers

Silicon films

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